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H3950 参数 Datasheet PDF下载

H3950图片预览
型号: H3950
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 112 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T RA N S I S T O R
H3950
APPLICATIONS
High-definition CRT display video output,wide-band amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
C
=25℃)…………………… 5W
P
C
——Collector
Dissipation(T
A
=25℃)………………… 1.3W
V
CBO
——Collector-Base
Voltage………………………… 30V
V
CEO
——Collector-Emitter
Voltage……………………… 20V
V
EBO
——Emitter-Base
Voltage……………………………… 3V
I
C
——Collector
Current……………………………………500mA
1―Emitter,E
2―Collector,C
3―Base,B
TO-126ML
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
Collector Cut-off Current
Emitter Cut-off Current
40
20
0.3
0.9
2.0
6.0
0.1
5
200
0.8
1.2
μA
μA
V
CB
=20V, I
E
=0
V
EB
=2V, I
C
=0
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=500mA
H
FE(1)
DC Current Gain
H
FE(2)
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(sat)
Base-Emitter Saturation Voltage
f
T
Cob
Current Gain-Bandwidth Product
Output Capacitance
V
V
GHz
pF
I
C
=300mA, I
B
=30mA
I
C
=300mA, I
B
=30mA
V
CE
=5V,I
C
=100mA,
V
CB
=10V, f=1MHz
h
FE
Classification
C
40—80
D
60—120
E
100—200