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H423 参数 Datasheet PDF下载

H423图片预览
型号: H423
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 301 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H423的Datasheet PDF文件第2页浏览型号H423的Datasheet PDF文件第3页  
P NP S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H423
APPLICATIONS
Class-B video output stages in colour television and
professional monitor equipment
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………830mW
V
CBO
——Collector-Base
Voltage………………………………-250V
V
CEO
——Collector-Emitter
Voltage……………………………-250V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current………………………………………-50mA
I
CP
——Collector
Current
(Pulse)
………………………………-100mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
Cre
-250
-250
-5
-10
-50
50
-0.6
1.6
60
V
V
V
nA
nA
V
pF
MHz
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-200V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-20V, I
C
=-25mA
I
C
=-30mA, I
B
=-5mA
V
CE
=-30V, I
C
=0,f=1MHz
V
CE
=-10V, I
C
=-10mA,
f=100MHz
DC Current Gain
Collector- Emitter Saturation Voltage
Feedback Capacitance
Current Gain-Bandwidth Product
f
T