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H5401 参数 Datasheet PDF下载

H5401图片预览
型号: H5401
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 95 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H5401
AMPLIFIER TRANSISTOR
Collector-Emitter Voltage:Vceo=150V.
Collector Dissipation:Pc(max)=625mW
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………-160V
V
CEO
——Collector-Emitter
Voltage……………………………-150V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current………………………………………-600mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,
C
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE(1)
H
FE(2)
H
FE(3)
V
CE(sat1)
V
CE(sat2)
V
BE(sat1)
V
BE(sat2)
f
T
-160
-150
-5
-50
-50
30
60
50
280
-0.2
-0.5
-1
-1
V
V
V
nA
nA
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-120V, I
E
=0
V
EB
=-3V, I
C
=0
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
V
V
MHz
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA,
V
CE
=-10V, I
C
=-10mA
F=100MHz
Current Gain-Bandwidth Product
100
400