N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H548
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SWITCHING AND AMPLIFIER
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………500mW
V
CBO
——Collector-Base
Voltage………………………………30V
V
CEO
——Collector-Emitter
Voltage……………………………35V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current……………………………………100mA
1―Collector，
C
2―Base，B
3―Emitter，E
TO-92
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
H
FE
V
CE(sat1)
V
CE(sat2)
V
BE(sat1)
V
BE(sat2)
V
BE(ON1)
30
30
5
15
110
90
200
0.7
0.9
580
660
300
2.5
2
10
800
250
600
1
1.2
700
V
V
V
nA
mV
mV
V
V
mV
MHz
pF
dB
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=1mA，I
C
=0
V
CB
=30V, I
E
=0
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0
f=100MHz
V
CE
=5V, I
C
=200μA
f=1KHz，Rg=2KΩ
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
f
T
Cob
N
F
█
h
FE
Classification
A
110—220
B
200—450
C
420—800
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
