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H556 参数 Datasheet PDF下载

H556图片预览
型号: H556
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 81 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H556
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………500mW
V
CBO
——Collector-Base
Voltage………………………………-80V
V
CEO
——Collector-Emitter
Voltage……………………………-65V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-100mA
1―Collector,
C
2―Base,B
3―Emitter,E
TO-92
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
H
FE
V
CE(sat1)
V
CE(sat2)
V
BE(sat1)
V
BE(sat2)
V
BE(ON)
-15
110
-90
-250
-0.7
-0.9
-600
-660
150
2
10
-750
800
-300
-650
nA
mV
mV
V
V
mV
MHz
dB
V
CB
=-30V, I
E
=0
V
CE
=-5V, I
C
=-2mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
V
CE
=-5V, I
C
=-2mA
V
CE
=-5V, I
C
=-10mA
f=100MHz
V
CE
=-5V, I
C
=-200μA
f=1KHz,Rg=2KΩ
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Noise Figure
f
T
N
F
h
FE
Classification
A
110—220
B
200—450
C
420—800