PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
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APPLICATIONS
SWITCHING AND AMPLIFIER
H557
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………500mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-45V
V
E B O
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-100mA
TO-92
1―Collector，
C
2―Base，B
3―Emitter，E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
H
FE
V
CE(sat2)
－５０
－４５
－５
１１０
－１５
８００
Ｖ
Ｖ
Ｖ
I
C
=-100μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-100μA，I
C
=0
�½�Ａ
V
CB
=-30V, I
E
=0
V
CE
=-5V, I
C
=-2mA
DC Current Gain
V
CE(sat1)
Collector- Emitter Saturation Voltage
V
BE(sat1)
Base-Emitter Saturation Voltage
V
BE(sat2)
V
BE(ON1)
Base-Emitter On Voltage
V
BE(ON2)
－９０ －３００ �½�Ｖ
I
C
=-10mA, I
B
=-0.5mA
－２５０ －６５０ �½�Ｖ
I
C
=-100mA, I
B
=-5mA
－７００
－９００
１５０
�½�Ｖ
I
C
=-10mA, I
B
=-0.5mA
�½�Ｖ
I
C
=-100mA, I
B
=-5mA
－６６０ －７５０ �½�Ｖ
V
CE
=-5V, I
C
=-2mA
－８００ �½�Ｖ
V
CE
=-5V, I
C
=-10mA
６
ＭＨ�½�
V
CE
=-5V,I
C
=-10mA,f=1MHz
�½�Ｆ
V
CB
=-10V, I
E
=0,f=1MHz
f
T
Cob
Current Gain-Bandwidth Product
Output Capacitance
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h
FE
Classification
A
110—220
B
200—450
C
420—800
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
