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H5610 参数 Datasheet PDF下载

H5610图片预览
型号: H5610
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 107 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
PNP S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H5610
APPLICATIONS
AUDIO AMPLIFICATION
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………750mW
V
CBO
——Collector-Base
Voltage………………………………-25V
V
CEO
——Collector-Emitter
Voltage……………………………-20V
V
EBO
——Emitter-Base
Voltage…………………���…………-5V
I
C
——Collector
Current……………………………………-1A
TO-92
1―Emitter,E
2―Collector,
C
3― Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
H
FE
V
CE(sat)
V
BE(ON)
f
T
Cob
-25
-20
-5
-1
60
-0.2
-0.8
360
38
240
-0.5
1
V
V
V
μA
V
V
MHz
pF
I
C
=-10μA, I
E
=0
I
C
=-1mA,
I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-2V, I
C
=-500mA
I
C
=-800mA, I
B
=-80mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-500mA
V
CB
=-10V, I
E
=0,
f=1MHz
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
h
FE
Classification
A
60—120
B
85—170
C
120—240