PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
Low frequency power amplifier
.
H562
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………500mW
V
CBO
——Collector-Base
Voltage………………………………-35V
V
CEO
——Collector-Emitter
Voltage……………………………-30V
V
E B O
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current………………………………………-500mA
I
E
——Emitter
Current………………………………………500mA
TO-92
1―Emitter，E
2―Collector，C
3― Base，B
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
７０
２５
１５０
－０．８
２００
１３
－１００
－１００
２４０
－１．０
�½�Ａ
V
CB
=-35V, I
E
=0
�½�Ａ
V
EB
=-5V, I
C
=0
Ｖ
Ｖ
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-400mA
I
C
=-100mA, I
B
=-10mA
V
CE
=1V, I
C
=100mA
Emitter
Cut-off Current
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
V
BE
f
T
Cob
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
－０．１ －０．２５
ＭＨ�½�
V
CE
=-6V, I
C
=-20mA
�½�Ｆ
V
CB
=-6V, I
E
=0，f=1ＭＨ�½�
Output Capacitance
█
h
FE
Classification
O
７０—１４０
Y
１２０—２４０
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
