NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H639
█
APPLICATIONS
Switching And Amplifier Application.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………1W
V
CBO
——Collector-Base
Voltage………………………………100V
V
CEO
——Collector-Emitter
Voltage……………………………80V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current……………………………………………1A
Ib——Base Current……………………………………………100mA
TO-92
1―Emitter，E
2―Collector，
C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
H
FE（1）
H
FE（2）
H
FE（3）
V
CE(sat)
V
BE(on)
I
CBO
I
EBO
f
T
80
25
40
25
0.5
1
100
100
100
250
V
I
C
=10mA,
I
E
=0
DC Current Gain
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cut-off Current
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=500mA
V
V
nA
nA
MHz
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=10mA ,f=50MHz
Emitter
Cut-off Current
Current Gain-Bandwidth Product
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
