PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
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APPLICATIONS
The H733 is designed for driver stage of AF amplifier
And low speed switching.
H733
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………250mW
V
CBO
——Collector-Base
Voltage………………………………-60V
V
CEO
——Collector-Emitter
Voltage……………………………-50V
V
E B O
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-150mA
TO-92
1―Emitter，E
2―Collector，
C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE
V
CE(sat)
V
BE(ON)
I
CBO
I
EBO
f
T
Cob
－６０
－５０
－５
９０
－０．５
１８０
４．５
６００
－０．３
－０．８
－１００
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
I
C
=-100μA,
I
C
=-10mA,
I
E
=0
I
B
=0
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cut-off Current
I
E
=-10μA，I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-1mA
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
－１００
ＭＨ�½�
V
CE
=-6V, I
C
=-10mA
�½�Ｆ
V
CB
=-10V, I
E
=0，
f=1ＭＨ�½�
�½�Ａ
V
CB
=-60V, I
E
=0
�½�Ａ
V
EB
=-5V, I
C
=0
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h
FE
Classification
R
９０—１８０
Q
１３５—２７０
P
２００—４００
K
３００—６００
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
