Shantou Huashan Electronic Devices Co.,Ltd.
H8550
█
PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………1W
V
CBO
——Collector-Base
Voltage………………………………-40V
V
CEO
——Collector-Emitter
Voltage……………………………-25V
V
EBO
——Emitter-Base
Voltage………………………………-6V
I
C
——Collector
Current………………………………………-1.5A
1―Emitter，E
2―Base，B
3―Collector，
C
TO-92
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE（2）
V
BE
V
BE(sat)
BV
CBO
BV
CEO
BV
EBO
Cob
-0.1
-0.1
85
40
500
-1
-0.5
-1.2
-40
-25
-6
15
100
μA
μA
V
CB
=-35V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
H
FE（1）
DC Current Gain
Base- Emitter Voltage
Base- Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Output Capacacitance
Current Gain-Bandwidth Product
V
V
V
V
V
V
pF
V
CE
=-1V, I
C
=-10mA
I
C
=-800mA, I
B
=-80mA
I
C
=-800mA,I
B
=-80mA
I
C
=-100μA，I
E
=0
I
C
=-2mA，I
B
=0
I
E
=-100μA，I
C
=0
V
CB
=-10V,I
E
=0，
f=1MHz
V
CE(sat）
Collector- Emitter Saturation Voltage
f
T
MHz V
CE
=-10V, I
C
=-50mA
█
h
FE
Classification
B
85—160
C
120—200
D
160—300
E
270—500
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
