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H926 参数 Datasheet PDF下载

H926图片预览
型号: H926
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 202 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H926的Datasheet PDF文件第2页浏览型号H926的Datasheet PDF文件第3页  
PNP S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H926
POWER SUPPLIES,RELAY DRIVERS,
LAMP DRIVERS,ELECTRICAL EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………750mW
V
CBO
——Collector-Base
Voltage………………………………-30V
V
CEO
——Collector-Emitter
Voltage……………………………-25V
V
EBO
——Emitter-Base
Voltage………………………………-6V
I
C
——Collector
Current……………………………………-2A
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
f
T
Cob
-30
-25
-6
100
65
130
-0.35
-0.85
-0.6
-1.2
-100
-100
150
32
560
V
V
V
I
C
=-10μA, I
E
=0
I
C
=-1mA,
I
B
=0
I
E
=-10μA,I
C
=0
V
CE
=-2V, I
C
=-100mA
V
CE
=-2V, I
C
=-1.5A *
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
V
V
nA
nA
MHz
pF
I
C
=-1.5A, I
B
=-75mA *
I
C
=-1.5A, I
B
=-75mA *
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, I
E
=0,f=1MHz
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
* pulse
h
FE
Classification
R
100—200
S
140—280
T
200—400
U
280—560