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H930 参数 Datasheet PDF下载

H930图片预览
型号: H930
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 124 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H930的Datasheet PDF文件第2页浏览型号H930的Datasheet PDF文件第3页浏览型号H930的Datasheet PDF文件第4页  
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
FM RF amp,mixer,osc,converter,and IF amplifier.
H930
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature……………………��…………150℃
P
C
——Collector
Dissipation…………………………………250mW
V
CBO
——Collector-Base
Voltage………………………………30V
V
CEO
——Collector-Emitter
Voltage……………………………20V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current
……………………………………
30mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
 
f
T
NF
t
ON
t
OFF
 
30 
20 
5 
 
 
40 
170 
 
 
 
 
 
 
 
 
80 
300 
4.0 
30 
30 
 
 
 
 
1.0 
1.0 
320 
 
 
V 
V 
V 
I
C
=100µA
,I
E
=0
I
C
=5mA,I
B
=0
I
E
=100µA
,I
C
=0
μA 
V
CB
=10V, I
E
=0
μA 
V
EB
=4V, I
C
=0
 
�½�B 
�½��½� 
V
CE
=6V, I
C
=1mA
CE
=6V,I
=1�½�A,�½�=100MH�½� 
IN
=+12V,V
BB
=-3V, 
�½��½��½��½��½��½��½��½��½� �½��½��½��½��½��½��½� 
IN
=-12V,V
BB
=+3V, 
�½��½��½��½��½��½��½��½��½� �½��½��½��½��½��½��½�
MH�½� 
V
CE
=6V, I
C
=1mA
Emitter
Cut-off Current
DC Current Gain 
Current Gain-Bandwidth Product
Noise Figure
Turn-On Time
Turn-Off Time
 
�½��½� 
█ h
FE
Classification
C
40—80 
D
60--120 
E
100--200 
F
160--320