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H945 参数 Datasheet PDF下载

H945图片预览
型号: H945
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 71 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H945的Datasheet PDF文件第2页  
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H945
APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………250mW
V
CBO
——Collector-Base
Voltage………………………………60V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current……………………………………150mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
f
T
Cob
NF
60
50
5
90
600
0.3
1.0
100
100
250
3.0
4.0
V
V
V
V
V
nA
nA
MHz
pF
dB
I
C
=100μA, I
E
=0
I
C
=100μA, I
B
=0
I
E
=100μA,I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0,f=1MHz
V
CE
=6V,I
C
=0.5mA,f=1KHz,
Rs=500Ω
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
h
FE
Classification
R
90—180
Q
135—270
P
200—400
K
300—600