NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HA06
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APPLICATIONS
General Purpose Amplifier.
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ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………80V
V
CEO
——Collector-Emitter
Voltage……………………………80V
V
EB O
——Emitter-Base
Voltage………………………………4V
I
C
——Collector
Current……………………………………500mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,
C
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ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Uni
t
Test Conditions
BV
CEO
BV
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
I
CBO
I
CEO
f
T
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Collector Cut-off Current
Collector Cut-off Current
Current Gain-Bandwidth Product
80
4
50
50
0.25
1.2
100
100
100
V
V
I
C
=1mA, I
B
=0
I
E
=100μA,I
C
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
V
V
nA
nA
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CB
=80V, I
E
=0
V
CE
=60V, I
B
=0
V
BE(on)
Base-Emitter On Voltage
MHz
V
CE
=20V,I
C
=10mA, f=100MHz