PNP DIGITAL TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HA114T
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APPLICATIONS
Switching Circuit，Interface Circuit.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-50V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-100mA
TO-92S
1―Emitter，E
2―Collector，
C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
-50
-50
-5
-0.5
-0.5
100
-0.4
-0.7
7.0
250
-0.55
-1.2
10
250
3.7
600
-0.3
-0.8
-3.0
13
V
V
V
μA
μA
V
V
V
K
Ω
MHz
pF
I
C
=-50μA, I
E
=0
I
C
=-1mA,
I
B
=0
I
E
=-50μA，I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-5V, I
C
=-0.1mA
V
CE
=-0.2V, I
C
=-10mA
V
CE
=-10V, I
C
=-5mA
V
CB
=-10V, f=1MHz
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
V
I
（off） Input Off Voltage
V
I
（on） Input On Voltage
R1
Input Resistor
Current Gain-Bandwidth Product
f
T
Cob
Output Capacitance
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
