PNP DIGITAL TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
Switching Circuit，Interface Circuit．
HA114Y
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-50V
V
E B O
——Emitter-Base
Voltage………………………………-6V
I
C
——Collector
Current……………………………………-100mA
TO-92S
1―Emitter，E
2―Collector，
C
3―Base，B
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
H
FE
－５０
－５０
－６７
３０
－８８
－０．１
－０．５
－１２５
Ｖ
Ｖ
I
C
=-10μA,
I
C
=-1mA,
I
E
=0
I =0
B
μＡ
V
CB
=-40V, I
E
=0
μＡ
V
CE
=-40V, I
B
=0
μＡ
V
EB
=-5V, I
C
=0
Ｖ
Ｖ
V
CE
=-5V, I
C
=-5mA
I
C
=-10mA, I
B
=-0.5mA
V
CE
=-5V, I
C
=-0.1mA
Emitter
Cut-off Current
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
Ｖ
Ｉ
（�½��½��½�） Ｉ�½��½��½��½� Ｏ�½��½� Ｖ�½��½��½��½��½��½�
Ｖ
Ｉ
（�½��½�）
R1
R1/ R2
f
T
Cob
Ｉ�½��½��½��½� Ｏ�½� Ｖ�½��½��½��½��½��½�
Ｉ�½��½��½��½� Ｒ�½��½��½��½��½��½��½�
Ｒ�½��½��½��½��½��½��½� Ｒ�½��½��½��½�
Current Gain-Bandwidth Product
－０．１ －０．３
－０．５ －０．７ －０．９
－１．０ －２．０ －４．０
Ｖ
V
CE
=-0.2V, I
C
=-10mA
７．０
１０
１３ Ｋ�½��½��½�
０．１９３ ０．２１３ ０．２３４
２５０
５．５
ＭＨ�½�
V
CE
=-10V, I
C
=-5mA
�½�Ｆ
V
CB
=-10V, f=1ＭＨ�½�
Output Capacitance
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
