Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T RA N S I S T O R
HB123D
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APPLICATIONS
Power Amplifie
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
C
=25℃）………………… 10W
V
CBO
——Collector-Base
Voltage………………………… 500V
V
CEO
——Collector-Emitter
Voltage……………………… 400V
V
EBO
——Emitter-Base
Voltage……………………………… 8V
I
C
——Collector
Current…………………………………………1A
1―Emitter，E
2―Collector，C
3―Base，B
TO-126ML
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
500
400
8
10
10
10
0.3
65
V
V
V
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA，I
C
=0
V
CE
=5V, I
C
=300mA
V
CE
=5V, I
C
=500mA
μA
V
CB
=500V, I
E
=0
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
I
C
=100mA, I
B
=10mA
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
