Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
HBD195
█
APPLICATIONS
. .Medium Power Amplifie.
█
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 10W
P
C
——Collector
Dissipation
A
=25℃)
(T
……………………
1.5W
V
CBO
——Collector-Base
Voltage………………………… 50V
V
CES
——Collector-Emitter
Voltage……………………… 40V
V
CEO
——Collector-Emitter
Voltage……………………… 20V
V
EBO
——Emitter-Base
Voltage……………………………… 8V
I
CP
——Collector
Current
(
Pulse)…………………………… 10A
I
C
——Collector
Current DC)
(
…………………………………
5A
Ib——Base Current……………………………………………1A
1―Emitter,E
2―Collector,C
3―Base,B
TO-126ML
█
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
CBO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE
f
T
Cob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
20
100
100
140
70
1
1.5
100
40
600
V
nA
nA
I
C
=10mA, I
B
=0
V
CB
=40V, I
E
=0
V
EB
=8V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=5A
V
V
MHz
pF
I
C
=6A, I
B
=0.15A
V
CE
=2V, I
C
=4A
V
CE
=2V,I
C
=500mA
V
CB
=10V, I
E
=0,f=1MHz
Pulse Test:PW=10Ms(max),Duty Cycle=30%(min)
█
h
FE
Classification
Y
140—240
GR
200—400
BL
300—600