Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
HBD435
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APPLICATIONS
Medium Power Linear And Switching Applicatione.
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ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-65~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 40W
V
CBO
——Collector-Base
Voltage………………………… 32V
V
CES
——Collector-Emitter
Voltage……………………… 32V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current DC)
(
…………………………………
4A
I
C
——Collector
Current(Pulse)………………………………7A
(
………………………………………1A
I
B
——Base
Current DC)
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
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ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter-Base Cutoff Current
Collector Cutoff Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO(SUS)
I
CBO
I
EBO
I
CES
H
FE(1)
*H
FE(2)
*H
FE(3)
*V
CE(sat1)
*V
BE(on)
f
T
32
100
1
100
40
85
50
130
140
0.2
3
0.5
1.1
V
μA
mA
μA
I
C
=100mA, I
B
=0
V
CB
=32V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=32V, V
BE
=0
V
CE
=5V, I
C
=10mA
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter On Voltage
Current Gain-Bandwidth Product
V
V
MHz
I
C
=2A, I
B
=0.2A
V
CE
=1V,I
C
=2A,
Ic=250mA, V
CE
=1V
*Pulse Test: PW=300μS,Duty Cycle=1.5% Pulsed