Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON
TRANSISTOR
HBD681
█ APPLICATIONS
Medium Power Linear switching.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-65~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 40W
V
CBO
——Collector-Base
Voltage…………………………… 100V
V
CEO
——Collector-Emitter
Voltage………………………… 100V
V
EBO
——Emitter-Base
Voltage………………………………… 5V
I
C
——Collector
Current Pulse）
（
…………………………………
6A
I
C
——Collector
Current DC）
（
……………………………………
4A
I
B
——Base
Current……………………………………………100mA
TO-126F
1―
Emitter, E
2―Collector，C
3―Base，B
█ 电参数
（
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
I
CES
*H
FE
V
BE(on)
V
CEO(SUS)
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
200
2
500
750
2.5
2.5
100
μA
mA
μA
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=100V, V
EB
=0
V
CE
=3V, I
C
=1.5mA
I
C
=1.5A, I
B
=30mA
V
CE
=3V, I
C
=1.5A
I
C
=50mA, I
B
=0
*V
CE(sat)
Collector- Emitter Saturation Voltage
V
V
* Pulse Test:PW=300µS,Duty Cycie=1.5% Pulsed
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
