Shantou Huashan Electronic Devices Co.,Ltd.
HBTA16A60
ＩＮＮＥＲ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＴＲＩＡＣ （ＩＩ ＴＯ－２２０ ＰＡＣＫＡＧＥ）
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(I
T(RMS)
=16A)
* High Commutation dv/dt
*Isolation Voltage（V
ISO
=2500V AC）
█ General
Description
The Triac HBTA16A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,and static switching relay.
█
Absolute Maximum Ratings
（T
a
=25℃）
T
stg
——Storage
Temperature………………………………………………………………
－40~125℃
T
j
——Operating
Junction Temperature
…………………………………………………… －40~125℃
P
GM
——Peak
Gate Power Dissipation………………………………………………………………… 5W
V
DRM
——Repetitive
Peak Off-State Voltage………………………………………………………… 600V
I
T
（
RMS
）——R.M.S
On-State Current（Ta=68℃）………………………………………………… 16A
V
G M
——Peak
Gate Voltage
…………………………………………………………………
10V
I
G M
— —
P e a k G a t e C u r r e n t
… … … … … … … … … … … … … … … … … … … … … … …
2 . 0 A
I
TSM
——Surge
On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………………… 155/170A
V
——RMS
Isolation Breakdown Voltage……………………………………………………… 2500V
ISO
█
Electrical Characteristics
（T
a
=25℃）
Symbol
I
DRM
V
TM
I+
GT1
I-
GT1
I-
GT3
V+
G T1
V-
GT1
V-
GT3
V
GD
(dv/dt)c
Rth(j-c)
I
H
Items
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Thermal Resistance
Holding Current
25
0.2
10
3.0
Min.
Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
Unit
mA
V
mA
mA
mA
V
V
V
V
V/µS
℃/W
mA
Conditions
VD=VDRM, Single Phase,Half
Wave, TJ=125℃
I
T
=25A, Inst. Measurement
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
TJ=125℃,VD=2/3VDRM
(di/dt)c=-8.0A/ms
Junction to case
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
