Shantou Huashan Electronic Devices Co.,Ltd.
HBTA6A60
ＩＮＮＥＲ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＴＲＩＡＣ （ＩＩ ＴＯ－２２０ ＰＡＣＫＡＧＥ）
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-State Current(I
T(RMS)
=6A)
* High Commutation dv/dt
*Isolation Voltage（V
ISO
=2500V AC）
█ General
Description
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
█
Absolute Maximum Ratings
（T
a
=25℃）
T
stg
——Storage
Temperature…………………………………………………………………
－40~150℃
T
j
——Operating
Junction Temperature
…………………………………………………… －40~125℃
P
GM
——Peak
Gate Power Dissipation………………………………………………………………… 5W
V
DRM
——Repetitive
Peak Off-State Voltage………………………………………………………… 600V
I
T
（
RMS
）——R.M.S
On-State Current（Tc=94℃）………………………………………………… 6A
V
GM
——Peak
Gate Voltage…………………………………………………………………………… 10V
I
GM
——Peak
Gate Current…………………………………………………………………………… 2.0A
I
TSM
——Surge
On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)
……………………
60/66A
V
ISO
——RMS
Isolation Breakdown Voltage……………………………………………………… 2500V
█
Electrical Characteristics
（T
a
=25℃）
Symbol
I
DRM
V
TM
I+
GT1
I-
GT1
I-
GT3
V+
GT1
V-
GT1
V-
GT3
V
GD
(dv/dt)c
I
H
Rth(j-c)
Items
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
0.2
5.0
10
3.8
Min
Max
1.0
1.6
10
10
10
1.5
1.5
1.5
Unit
mA
V
mA
mA
mA
V
V
V
V
V/µS
mA
℃/W
Junction to case
Conditions
V
D
=V
DRM
,Single Phase,Half
Wave, T
J
=125℃
I
T
=8A, Inst. Measurement
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
T
J
=125℃,V
D
=2/3V
DRM
(di/dt)c=-3A/ms
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
