Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
HC1061
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APPLICATIONS
Low Frequency Power Amplifier.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-65~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 25W
V
CBO
——Collector-Base
Voltage……………………………50V
V
CEO
——Collector-Emitter
Voltage………………………… 50V
V
EBO
——Emitter-Base
Voltage……………………………… 4V
I
C
——Collector
Current…………………………………… 3.0A
I
CM
——Collector
Current
（Peak）
………………………………
8A
Ib——Base Current……………………………………………0.5A
TO-220
1―
Base，B
2―Collector，C
3―Emitter, E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Emitter Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
50
50
4
100
100
35
35
1.0
1.5
5.0
320
V
V
V
I
C
=50mA,
I
C
=5mA,
I
B
=0
I
E
=0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
E
=5mA，I
C
=0
μA
V
CB
=25V, I
E
=0
μA
V
EB
=4V, I
C
=0
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=0.1A
V
V
MHz
I
C
=2A, I
B
=0.2A
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=0.5A, f=1MHz
Emitter Cut-off Current
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
V
BE(on)
f
t
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
█
h
FE
Classification
A
35—70
B
60—120
C
100—200
D
160—320
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
