NPN DIGITAL T R AN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
Switching Circuit，Interface Circuit．
HC114E
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………50V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
E B O
——Emitter
-Base Voltage……………………………… 10V
I
C
——Collector
Current……………���……………………-100mA
TO-92S
1―Emitter，E
2―Collector，
C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
H
FE
V
CE(sat)
Ｖ
Ｉ
（�½��½�）
R1
R2/R1
f
T
５０
５０
１９５
３０
０．８
１．０
７．０
０．８
２５０
０．１
１．１
２．０
１０
１．０
２５０
０．１
０．５
３６０
０．３
１．５
Ｖ
Ｖ
I
C
=10μA,
I
C
=0.1mA,
I
E
=0
I =0
B
μＡ
V
CB
=40V, I
E
=0
μＡ
V
CE
=40V, I
B
=0
μＡ
V
EB
=5V, I
C
=0
Ｖ
Ｖ
V
CE
=5V, I
C
=5mA
I
C
=10mA, I
B
=0.5mA
V
CE
=5V, I
C
=0.1mA
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Ｉ�½��½��½��½� Ｏ�½� Ｖ�½��½��½��½��½��½�
Ｉ�½��½��½��½� Ｒ�½��½��½��½��½��½��½�
Ｒ�½��½��½��½��½��½��½� Ｒ�½��½��½��½�
Current Gain-Bandwidth Product
Ｖ
Ｉ
（�½��½��½�） Ｉ�½��½��½��½� Ｏ�½��½� Ｖ�½��½��½��½��½��½�
４．０
Ｖ
V
CE
=0.2V, I
C
=10mA
１３ Ｋ�½��½��½�
１．２
ＭＨ�½�
V
CE
=-10V, I
C
=-5mA
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
