NPN DIGITAL T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
Switching Circuit，Interface Circuit．
HC114T
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………50V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current………………………………………100mA
1―Emitter，E
2―Collector,C
3―Base，B
TO-92S
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
５０
５０
５
１００
０．７
７．０
１．２
１０
２５０
３．７
Ｖ
Ｖ
Ｖ
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA，I
C
=0
０．１ μA
V
CB
=50V, I
E
=0
０．１ μA
V
EB
=4V, I
C
=0
６００
V
CE
=5V, I
C
=1mA
０．３
３．０
１３
Ｖ
Ｖ
Ｖ
I
C
=10mA, I
B
=1mA
V
CE
=5V, I
C
=0.1mA
V
CE
=0.2V, I
C
=10mA
V
CE(sat)
Collector- Emitter Saturation Voltage
Ｖ
Ｉ
（�½��½��½�）
Input Off Voltage
Ｖ
Ｉ
（�½��½�）
Input On Voltage
R1
f
T
Cob
Input Resistor
Current Gain-Bandwidth Product
Output Capacitance
０．４ ０．５５ ０．８
Ｋ
Ω
ＭＨ�½�
V
CE
=10V,I
C
=5mA
�½�Ｆ
V
CB
=10V,f=1ＭＨ�½�
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
