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HC143E 参数 Datasheet PDF下载

HC143E图片预览
型号: HC143E
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 514 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HC143E的Datasheet PDF文件第2页  
NPN DIGITAL T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
Switching Circuit,Interface Circuit.
HC143E
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………50V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
E B O
——Emitter
-Base Voltage……………………………… 10V
I
C
——Collector
Current………………………………………100mA
1―Emitter,E
2―Collector,C
3―Base,B
TO-92S
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
H
FE
 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain 
50 
50 
 
 
410 
50 
 
0.8 
1.0 
3.3 
0.9 
 
 
 
 
 
 
532 
 
0.1 
1.1 
1.9 
4.7 
1.0 
250 
3.7 
 
 
V 
V 
I
C
=10μA, I
E
=0
I
C
=0.1mA, I
B
=0 
0.1  μA 
V
CB
=40V, I
E
=0
0.5  μA 
V
CE
=40V, I
B
=0
760  μA 
V
EB
=5V, I
C
=0
 
 
V
CE
=5V, I
C
=10mA 
0.3 
1.5 
4.0 
1.1   
 
 
MH�½� 
�½�F 
V
CE
=10V,I
C
=5mA
V
CB
=10V,f=1MH�½�
V 
V 
V 
I
C
=10mA, I
B
=0.5mA 
V
CE
=5V, I
C
=0.1mA 
V
CE
=0.3V, I
C
=20mA
V
CE(sat)
 
Collector- Emitter Saturation Voltage 
(�½��½��½�)
Input Off Voltage
 
(�½��½�)
Input On Voltage
R1
R2/R1
f
T
Cob
Input Resistor
Resistance Ratio
Current Gain-Bandwidth Product
Output Capacitance
6.1  K�½��½��½�