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HC2073 参数 Datasheet PDF下载

HC2073图片预览
型号: HC2073
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 145 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HC2073的Datasheet PDF文件第2页  
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC2073
APPLICATIONS
TV Vertical Deflection Output .
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃)
……………………………25W
V
CBO
——Collector-Base
Voltage………………………………150V
V
CEO
——Collector-Emitter
Voltage……………………………150V
V
E B O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current……………………………………………1.5A
TO-220
1―Base,B
2―Collector,
C
3―Emitter,E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
BV
CBO
BV
CEO
BV
EBO
H
FE
V
CE(sat)
I
CBO
I
EBO
f
T
Cob
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
4
50
Min
150
150
5
40
75
140
1
10
10
V
μA
μA
MHz
pF
Typ
Max
Unit
V
V
V
Test Conditions
I
C
=500μA, I
E
=0
I
C
=10mA,
I
B
=0
I
E
=500μA,I
C
=0
V
CE
=10V, I
C
=500mA
I
C
=500mA, I
B
=50mA
V
CB
=120V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V,I
C
=500mA
V
CB
=10V, I
E
=0,f=1MHz