NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC4106
█
APPLICATIONS
High Breakdown Voltage And High Reliability
.
Fast Switching Speed
.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃）
（
……………………………50W
V
CBO
——Collector-Base
Voltage………………………………500V
V
CEO
——Collector-Emitter
Voltage……………………………400V
V
EBO
——Emitter-Base
Voltage………………………………………7V
I
C
——Collector
Current………………………………………………7A
Ib——Base Current………………………………………………3A
TO-220
1―Base，B
2―Collector，
C
3―Emitter，E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
15
10
10
0.8
1.5
20
80
0.5
2.5
0.3
V
V
MHz
pF
μS
μS
μS
Min
500
400
7
10
10
50
Typ
Max
Unit
V
V
V
μA
μA
Test Conditions
I
C
=1mA,
I
C
=5mA,
I
E
=0
I
B
=0
I
E
=1mA，I
C
=0
V
CB
=400V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=0.8A
V
CE
=5V, I
C
=4A
V
CE
=5V, I
C
=10mA
I
C
=4A, I
B
=0.8A
I
C
=4A, I
B
=0.8A
V
CE
=10V,I
C
=0.8A
V
CB
=10V, I
E
=0，f=1MHz
V
CC
=10V,I
C
=5A
I
B1
=1A，I
B2
=-2A
RL=40ohms
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
H
FE（3）
DC Current Gain
V
CE(sat)
V
BE(sat)
f
T
Cob
t
ON
t
STG
t
F
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage
Fall Time
Time
█
h
FE
Classification
L
M
N
15—30
20—40
30—50
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
