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HC8050S 参数 Datasheet PDF下载

HC8050S图片预览
型号: HC8050S
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 133 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HC8050S的Datasheet PDF文件第2页  
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC8050S
APPLICATIONS
Audio Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Juncttion
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625W
V
CBO
——Collector-Base
Voltage………………………………40V
V
CEO
——Collector-Emitter
Voltage……………………………20V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current………………………………………500mA
1―Emitter,E
2―Collector,
C
3―Base,B
TO-92
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE(2)
0.1
0.1
85
40
0.6
0.6
40
20
5
1.2
0.73
500
μA
μA
V
CB
=25V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=500mA
H
FE(1)
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
BV
CBO
BV
CEO
BV
EBO
Base- Emitter Saturation Voltage
V
V
V
V
V
V
I
C
=500mA, I
B
=50mA
I
C
=500mA,I
B
=50mA
V
CE
=1V, I
C
=10mA
I
C
=100μA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=100μA,I
C
=0
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
h
FE
Classification
B
85—160
C
120—200
D
160—300
E
270—500