欢迎访问ic37.com |
会员登录 免费注册
发布采购

HC8550S 参数 Datasheet PDF下载

HC8550S图片预览
型号: HC8550S
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 131 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HC8550S的Datasheet PDF文件第2页  
PNP S I L I C O N T R AN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC8550S
APPLICATIONS
Audio Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Juncttion
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625W
V
CBO
——Collector-Base
Voltage………………………………-40V
V
CEO
——Collector-Emitter
Voltage……………………………-20V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current………………………………………-500mA
1―Emitter,E
2―Collector,
C
3―Base,B
TO-92
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE(2)
-0.1
-0.1
85
40
-0.6
-0.6
-40
-20
-5
-1.2
-0.73
500
μA
μA
V
CB
=-25V, I
E
=0
V
EB
=-3V, I
C
=0
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-500mA
H
FE(1)
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
BV
CBO
BV
CEO
BV
EBO
Base- Emitter Saturation Voltage
V
V
V
V
V
V
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-1V, I
C
=-10mA
I
C
=-100μA,I
E
=0
I
C
=-2mA,I
B
=0
I
E
=100μA,I
C
=0
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
h
FE
Classification
B
85—160
C
120—200
D
160—300
E
270—500