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HCN2C60 参数 Datasheet PDF下载

HCN2C60图片预览
型号: HCN2C60
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器 [Silicon Controlled Rectifier]
分类和应用: 可控硅整流器
文件页数/大小: 3 页 / 175 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HCN2C60的Datasheet PDF文件第2页浏览型号HCN2C60的Datasheet PDF文件第3页  
Shantou Huashan Electronic Devices Co.,Ltd.
HCN2C60
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(I
T(RMS)
=1.5A)
* Low On-State Voltage (1.2V(Typ.)@ I
TM
)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings
(T
a
=25
unless otherwise specified)
T
s t g
——Storage
Temperature ------------------------------------------------------
-40~125℃
T
j
——Operating
Junction Temperature ----------------------------------------------
-40~125℃
V
DRM
——Repetitive
Peak Off-State Voltage -------------------------------------------------------------------- 600V
I
T
RMS
)——R.M.S
On-State Current(180º Conduction Angles)------------------------------------------1.5A
I
T(AV)
——Average
On-State Current (Half Sine Wave : T
C
= 45 °C) ----------------------------------------1.0A
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------
I
2
t
——Circuit
Fusing Considerations(t = 8.3ms) -----------------------------------------------------------
P
GM
——Forward
Peak Gate Power Dissipation (T
a
=25℃) ---------------------------------------------------
15A
2W
0.9A
2
s
P
G(AV)
——Forward
Average Gate Power Dissipation (T
a
=25℃,t=8.3ms) ---------------------------------0.1W
I
FGM
——Forward
Peak Gate Current -------------------------------------------------------------------------------- 1A
V
RGM
——Reverse
Peak Gate Voltage ------------------------------------------------------------------------------- 5V