Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(I
T(RMS)
=10A)
* Low On-State Voltage (1.4V(Typ.)@ I
TM
)
* Non-isolated Type
█ General
Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
█
Absolute Maximum Ratings
（T
a
=25
℃
�½��½��½��½��½��½� �½��½��½��½��½��½��½��½��½� �½��½��½��½��½��½��½��½��½�）
T
s t g
——Storage
Temperature ------------------------------------------------------
－40~125℃
T
j
——Operating
Junction Temperature ----------------------------------------------
－40~125℃
V
DRM
——Repetitive
Peak Off-State Voltage -------------------------------------------------------------------- 600V
I
T
（
RMS
）——R.M.S
On-State Current（180º
Conduction Angles）---------------------------------------- 10A
I
T(AV)
——Average
On-State Current (Half Sine Wave : T
C
= 111 ° ----------------------------------------6.4A
C)
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A
I t
——Circuit
Fusing Considerations(t = 8.3ms) ------------------------------------------------------------
2
60A s
5W
2
P
GM
——Forward
Peak Gate Power Dissipation (T
a
=25℃） ---------------------------------------------------
P
G(AV)
——Forward
Average Gate Power Dissipation (T
a
=25℃，�½�＝８．３�½��½�） ---------------------------------0.5W
I
FGM
——Forward
Peak Gate Current -------------------------------------------------------------------------------- 2A
V
RGM
——Reverse
Peak Gate Voltage ------------------------------------------------------------------------------- 5V
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
