Shantou Huashan Electronic Devices Co.,Ltd.
HCP8C60
Silicon Controlled Rectifier
█
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(I
T(RMS)
=8A)
* Low On-State Voltage (1.3V(Typ.)@ I
TM
)
* Non-isolated Type
█
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
█
Absolute Maximum Ratings
（T
a
=25
℃
unless otherwise specified）
T
s t g
——Storage
Temperature ------------------------------------------------------
-40~125℃
T
j
——Operating
Junction Temperature ----------------------------------------------
-40~125℃
V
DRM
——Repetitive
Peak Off-State Voltage -------------------------------------------------------------------- 600V
I
T
（
RMS
）——R.M.S
On-State Current（180º Conduction Angles）------------------------------------------8A
I
T(AV)
——Average
On-State Current (Half Sine Wave : T
C
= 111 °C) ----------------------------------------6.4A
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A
I
2
t
——Circuit
Fusing Considerations(t = 8.3ms) ------------------------------------------------------------
60A
2
s
5W
P
GM
——Forward
Peak Gate Power Dissipation (T
a
=25℃) ---------------------------------------------------
P
G(AV)
——Forward
Average Gate Power Dissipation (T
a
=25℃,t=8.3ms) ---------------------------------0.5W
I
FGM
——Forward
Peak Gate Current -------------------------------------------------------------------------------- 2A
V
RGM
——Reverse
Peak Gate Voltage ------------------------------------------------------------------------------- 5V
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
