Shantou Huashan Electronic Devices Co.,Ltd.
HCR100 Series
Sensitive Gate
Silicon Controlled Rectifiers
█
Features
* Repetitive Peak Off-State Voltage : 400V thru 600V
* R.M.S On-State Current(I
T(RMS)
=0.8A)
* Low On-State Voltage (1.2V(Typ.)@ I
TM
)
█
General Description
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls,
gate drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily
adaptable for use in automatic insertion equipment.
█
Absolute Maximum Ratings
(T
a
=25
℃
unless otherwise specified)
T
s t g
——Storage
Temperature ------------------------------------------------------
-40~125℃
T
j
——Operating
Junction Temperature ----------------------------------------------
-40~125℃
V
DRM
——Repetitive
Peak Off-State Voltage
MCR100-6 ----------------------------------------------- 400V
MCR100-8 -------------------------------------------- 600V
(
——R.M.S
On-State Current All Condition Angles)
(
------------------------------------------ 0.8A
I
T
RMS
)
I
T(AV)
——Average
On-State Current (Half Sine Wave : T
C
= 74 °C) ------------------------------------ 0.5A
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ----------------------- 10A
I
2
t
——Circuit
Fusing Considerations(t = 8.3ms) ----------------------------------------------------- 0.415 A
2
s
P
GM
——Forward
Peak Gate Power Dissipation (T
a
=25℃) ---------------------------------------------- 0.1W
P
G(AV)
——Forward
Average Gate Power Dissipation (T
a
=25℃,t=8.3ms) -------------------------- 0.01W
I
FGM
——Forward
Peak Gate Current --------------------------------------------------------------------------- 1A
V
RGM
——Reverse
Peak Gate Voltage --------------------------------------------------------------------------- 5V