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HD313 参数 Datasheet PDF下载

HD313图片预览
型号: HD313
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 111 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T RA N S I S T O R
HD313
APPLICATIONS
Low Frequency Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 30W
P
C
——Collector
Dissipation(T
A
=25℃)………………… 1.75W
V
CBO
——Collector-Base
Voltage……………………………60V
V
CEO
——Collector-Emitter
Voltage………………………… 60V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current……………………………………… 3A
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
I
CEO
I
CBO
I
EBO
Collector Cut-off Current
Collector Cut-off Current
5
0.1
1
60
60
0.4
8
65
1
1.2
320
mA
mA
mA
V
CE
=60V, I
B
=0
V
CB
=60V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=0.1A
Emitter Cut-off Current
H
FE(1)
DC Current Gain
H
FE(2)
DC Current Gain
V
CE(sat)
V
BE
f
t
Cob
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
V
V
MHz
pF
I
C
=2A, I
B
=0.2A
V
CE
=2V, I
C
=1A
V
CE
=5V, I
C
=0.5A,
V
CB
=10V, I
E
=0,f=1MHz
Output Capacitance
h
FE
Classification
D
60—120
E
100—200
F
160—320