欢迎访问ic37.com |
会员登录 免费注册
发布采购

HD880 参数 Datasheet PDF下载

HD880图片预览
型号: HD880
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 153 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HD880的Datasheet PDF文件第2页  
Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
HD880
APPLICATIONS
Low Frequency Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 30W
V
CBO
——Collector-Base
Voltage……………………………60V
V
CEO
——Collector-Emitter
Voltage………………………… 60V
V
EBO
——Emitter-Base
Voltage……………………………… 7V
I
C
——Collector
Current……………………………………… 3A
Ib——Base Current………………………………………0.3A
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
CBO
I
EBO
60
100
100
60
20
0.4
0.7
3
70
0.8
1.5
0.8
1
1
300
V
I
C
=50mA,
I
B
=0
μA
V
CB
=60V, I
E
=0
μA
V
EB
=7V, I
C
=0
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=3A
V
V
MHz
pF
μS
μS
μS
I
C
=3A, I
B
=0.3A
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=0.5A,
V
CB
=10V, I
E
=0,f=1MHz
I
B1
= -I
B2
=0.2A
V
CC
=30V
Emitter Cut-off Current
H
FE(1)
DC Current Gain
H
FE(2)
DC Current Gain
V
CE(sat)
V
BE(on)
f
t
Cob
t
ON
t
STG
t
F
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
h
FE
Classification
O
60—120
Y
100—200
GR
150—300