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HD882S 参数 Datasheet PDF下载

HD882S图片预览
型号: HD882S
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 31 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
N PN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
HD882S
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………0.75W
V
CBO
——Collector-Base
Voltage………………………………40V
V
CEO
——Collector-Emitter
Voltage……………………………30V
V
E B O
— —
Emitter - Base Voltage…
… … … … … … … … … …5
V
I
C
——
Collector Current…………………………………… 3 A
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector Cut-off Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
I
CBO
I
EBO
H
FE
 
V
CE
(sat)
V
BE(sat)
 
f
T
Cob
 
 
100 
 
 
 
 
 
 
 
 
 
80 
55 
100 
100 
490 
0.5 
2.0 
 
 
�½�A 
V
CB
=30V,
I
E
=0
Emitter
Cut-off Current
DC Current Gain 
Collector Emitter Saturation Voltage
�½�A 
V
EB
=3V, I
C
=0
 
V 
V 
V
CE
=2V, I
C
=1A 
I
C
=2 A , I
B
=0.2A
I
C
=2A, I
B
=0.2A 
Base-Emitter Saturation Voltage 
Current Gain-Bandwidth Product
Output Capacitance
MH�½� 
V
CE
=5V, I
C
=0.1A
�½�F 
V
CB
=10V, I
E
=0 ,f=1MH�½�
h
FE
Classification
Q
P
 
160—320   
 
E
260—490   
   
 
 
 
 
100—200