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HE3055 参数 Datasheet PDF下载

HE3055图片预览
型号: HE3055
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 83 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
HE3055
GENERAL PURPOSE AND SWITCHING APPLICATIONS
DCCURRENT GAIN SPECIFIED TO 10 AMPERES
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 75W
P
C
——Collector
Dissipation(T
A
=25℃)……………………0.6W
V
CBO
——Collector-Base
Voltage…………………………… 70V
V
CEO
——Collector-Emitter
Voltage………………………… 60V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current(DC)……………………………… 10A
I
B
——Base
Current……………………………………………6A
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
█ 电参数
(T
a
=25℃)
Symbol
Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter-Base Cutoff Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
CEO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat1)
V
CE(sat2)
V
BE(on)
f
T
60
0.7
5
20
5
100
V
mA
mA
I
C
=10mA, I
B
=0
V
CE
=30V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=4V, I
C
=4A
V
CE
=4V, I
C
=10A
DC Current Gain
Collector- Emitter Saturation Voltage
1.1
8
V
V
V
I
C
=4A, I
B
=400mA
I
C
=10A, I
B
=3.3mA
V
CE
=4V, I
C
=4A
V
CE
=10V, I
C
=500mA
f=500KHz
Base- Emitter Saturation Voltage
Current Gain-Bandwidth Product
2.0
1.8