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HED880 参数 Datasheet PDF下载

HED880图片预览
型号: HED880
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 77 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HED880的Datasheet PDF文件第2页  
Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
HED880
█ APPLICATIONS 
Low Frequency Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃ 
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 30W
V
CBO
——Collector-Base
Voltage……………………………60V
V
CEO
——Collector-Emitter
Voltage………………………… 60V
V
EBO
——Emitter-Base
Voltage……………………………… 7V
I
C
——Collector
Current……………………………………… 3A
Ib——Base Current………………………………………0.3A
TO-220AB
1―
Base,B
2―Collector,C
3―Emitter, E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CEO
I
CBO
I
EBO
60 
 
 
60 
20 
 
 
 
 
 
 
 
 
 
 
 
 
0.4 
0.7 
3 
70 
0.8 
1.5 
0.8 
Emitter Cut-off Current
H
FE(1)
 
DC Current Gain 
H
FE(2)
 
DC Current Gain 
V
CE(sat)
 
Collector- Emitter Saturation Voltage 
V
BE(on)
 
Base-Emitter On Voltage 
f
t
Cob
t
ON
t
STG
t
F
Current Gain-Bandwidth Product
I
C
=50mA, I =0 
B
100  μA 
V
CB
=60V, I
E
=0
100  μA 
V
EB
=7V, I
C
=0
300 
 
V
CE
=5V, I
C
=0.5A 
 
1 
1 
 
 
 
 
 
 
V 
V 
V
CE
=5V, I
C
=3A 
I
C
=3A, I
B
=0.3A 
V
CE
=5V, I
C
=0.5A 
 
V 
MH�½� 
V
CE
=5V, I
C
=0.5A,
�½�F 
V
CB
=10V, I
E
=0,f=1MH�½�
μS 
μS 
μS 
I
B1
= -I
B2
=0.2A
V
CC
=30V
Output Capacitance
Turn-On Time
Storage Time
Fall Time
h
FE
Classification
O
60—120   
         
Y
GR
     100—200            150—300