NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
Mediu�½� Power Linear switching Applications.
HEP31 Series
（HEP31/HEP31A/HEP31B/HEP31C）
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃）
（
……………………………40W
P
C
——Collector
Dissipation（Ta=25℃）……………………………2W
V
C BO
——Collector-Base
Voltage、V
CEO
——Collector-Emitter
Voltage
HEP31………………………………40V
HEP31A……………………………60V
HEP31B……………………………80V
HEP31C…………………………100V
V
E B O
——
Emitter - Base Voltage………………………………5 V
I
C
——Collector
Current（DC）………………………………………3A
I
C
——Collector
Current（Pulse）……………………………………5A
Ib——Base Current
………………………………………………1A
TO-220AB
1―Base，B
2―Collector，
C
3―Emitter，E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
BV
CEO
Characteristics
Collector-Emitter Breakdown Voltage
Min Typ Max Unit
０．３
０．３
２００
２００
２００
２００
５０
１．２
１．８
１
Ｖ
Ｖ
Ｖ
Ｖ
�½�Ａ
�½�Ａ
μＡ
μＡ
μＡ
μＡ
Ｖ
Ｖ
�½�Ａ
ＭＨ�½�
Test Conditions
I
C
=30mA, I
B
=0
HEP31
４０
HEP31A
６０
HEP31B
８０
HEP31C
１００
I
CEO
Collector Cut-off Current HEP31/ HEP31A
HEP31B/ HEP31C
I
CES
Collector Cut-off Current
HEP31
HEP31A
HEP31B
HEP31C
H
FE（1）
*DC Current Gain
２５
H
FE（2）
１０
V
CE(sat)
*Collector- Emitter Saturation Voltage
V
BE(ON)
*Base-Emitter On Voltage
I
EBO
Emitter Cut-off Current
f
T
Current Gain-Bandwidth Product
３．０
V
CB
=30V, I
B
=0
V
CB
=60V, I
B
=0
V
CE
=40V, V
EB
=0
V
CE
=60V, V
EB
=0
V
CE
=80V, V
EB
=0
V
CE
=100V, V
EB
=0
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=375mA
V
CE
=4V, I
C
=3A
V
EB
=5V, I
C
=0
V
CE
=10V,
I
C
=500mA
，�½�＝１ＭＨ�½�
*
Pulse Test：PW≤300μ�½�，Ｄ�½��½��½� �½��½��½��½��½�≤2%
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
