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HEP41C 参数 Datasheet PDF下载

HEP41C图片预览
型号: HEP41C
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 66 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HEP41C的Datasheet PDF文件第2页  
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
Medium Power Linear Switching Application.
HEP41C
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………………65W
P
C
——Collector
Dissipation
A
=25℃)………………………… 2W
(T
V
CBO
——Collector-Base
Voltage………………………………100V
V
CEO
——Collector-Emitter
Voltage……………………………100V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current……………………………………………6A
I
B
——Base
Current……………………………………………2A
TO-220AB
1―Base,B
2―Collector,
C
3― Emitter,E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CEO
I
CEO
I
EBO
I
CES
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter
Cut-off Current
Collector Cut-off Current
100 
 
 
 
30 
15 
 
 
3.0 
 
 
 
 
 
 
 
 
 
 
0.7 
1 
 
75 
1.5 
V 
I
C
=30mA,
I =0 
B
�½�A 
V
CE
=60V, I
B
=0
�½�A 
V
EB
=5V, I
C
=0
 
 
V 
V
CE
=4V, I
C
=0.3A 
V
CE
=4V, I
C
=3A 
I
C
=6A, I
B
=600mA
 
400  μA 
V
CE
=100V, V
EB
=0
H
FE(1)
 
DC Current Gain 
H
FE(2)
 
DC Current Gain 
V
CE(sat)
 
Collector- Emitter Saturation Voltage 
V
BE(on)
f
T
Base-Emitter On Voltage
Current Gain-Bandwidth Product
2.0  V 
V
CE
=4V, I
C
=6A
 
MH�½� 
V
CE
=10V, I
C
=500mA, f=1MH�½�