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HFP30N06 参数 Datasheet PDF下载

HFP30N06图片预览
型号: HFP30N06
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 225 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP30N06
N-Channel Enhancement Mode Field Effect Transistor
█ General
Description 
This Power MOSFET is produced using advanced planar stripe, DMOS
technology. This latest technology has been especially designed to minimize
on-state resistance, have a low gate charge with superior switching performance,
and rugged avalanche characteristics. This devices is well suited for synchronous
DC-DC Converters and Power Management in portable and battery operated
products.
TO-220
1- G 2-D 3-S
█ Features
60V, R
DS
(on)
<0.04?
@V
GS
= 10 V
•Low gate charge
•100% avalanche tested
•Improved dv/dt capability
•Equivalent Type:FQP30N06
30A,
Maximum Ratings
(Ta=25
 �½��½��½��½��½��½� �½��½��½��½��½��½��½��½��½� �½��½��½��½��½��½��½��½��½�)
T
s t g
——Storage
Temperature ------------------------------------------------------
-55~175���
 
 
 
 
T
j
——Operating
Junction Temperature -------------------------------------------------- 175℃ 
V
D S S
——
Drain -Source Voltage ---------------------------------------------------------- 60V
I
D
——
Drain Current (Continuous)(T
c
=25℃)----------------------------------------------------------- 30A
Drain Current (Continuous)(T
c
=100℃)--------------------------------------------------------- 21.2A
I
DM
——
Drain Current Pulse ------------------------------------------------------------------------------ 120A
V
GSS
——
Gate-Source Voltage --------------------------------------------------------------------------
±
20V
P
D
——
Maximum Power Dissipation (T
c
=25℃)----------------------------------------------------- 79W
E
AS
——
Single Pulse Avalanche Energy
(starting Tj = 25℃, I
D
= I
AR
, V
DD
= 50 V) --------------------------------------------------- 430 mJ
dv/dt—— Reak Diode Recovery dv/dt
(ISD≤30A,di/dt≤300A/us,Vdd≤BVdss,Duty Cycle
≤2%)
------------------------- 7.0V/ns
 
 
 
Thermal Characteristics 
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
TO-220
1.9
62.5
0.5
Unit
℃/W
℃/W
 
℃/W
 
 
Max
Typ