Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFP45N06
█ APPLICATIONSL
Low Voltage high-Speed Switching.
TO-220
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature……………………………－55~175℃
T
j
——Operating
Junction Temperature
…………………………150℃
P
D
——
Allowable Power Dissipation（T
c
=25℃）………………131W
V
DSS
——
Drain-Source Voltage
………………………………
60V
V
GSS
——
Gate-Source Voltage
…………………………………
±
0V
2
I
D
——
Drain Current T
c
=25℃）
（
……………………………………45A
1―G
2―D
3―S
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Ciss
Coss
Crss
t
ON
t
d(on)
tr
t
d(off)
t
f
t
OFF
Qg
Qg(10)
Qgd
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –
Source Leakage Current
Gate Threshold Voltage
*Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On
Time
Turn - On Delay Time
Rise Time
Turn - Off Delay Time
６０
２．０
２０５０
６００
２００
１２
７４
３７
１６
１２５
６７
３．７
１
V
I
D
=250μA ,V
GS
=0V
μＡ
V
DS
= 60V，V
GS
=0
±１００ �½�Ａ
V
GS
=±20V , V
DS
=0V
４．０
V
V
DS
= V
GS
, I
D
=250μA
０．０２８
１２０
８０
１５０
８０
４．５
１．５
V
GS
=10V, I
D
=45A
pF
pF
pF
nS
nS
nS
nS
nS
nS
nC
nC
nC
?
V
DS
=25V, V
GS
=0,f=1ＭＨ�½�
V
DD
=30V, I
D
=45A
R
L
=0.667Ω, V
GS
=10V
R
G
= 3.6
Ω
Fall Time
Turn Off
Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Ｖ
ＧＳ
＝２０Ｖ V
DS
=48V，
Ｄ
＝４５Ａ
Ｉ
Ｖ
ＧＳ
＝１０Ｖ Ｒ
Ｌ
＝1.07
Ω
Ｖ
ＧＳ
＝２Ｖ Ｉ�½�
（ＲＥＦ）
＝１．５�½�Ａ
I
SD
=45A
V
SD
Diode Forward Voltage
Rth
Thermal Resistance，
（j-c）
Junction-to-Case
*Pulse Test：Pulse Width≤300μs，Duty Cycle≤2%
Ｖ
１．１４
℃／Ｗ
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
