Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFP630
█ APPLICATIONSL
High Voltage High-Speed Switching.
TO-220
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature……………………………－55~150℃
T
j
——Operating
Junction Temperature
……………………���…150℃
P
D
——
Allowable Power Dissipation（T
c
=25℃）…………………72W
V
DSS
——
Drain-Source Voltage
…………………………………
200V
V
DGR
——
Drain-Gate Voltage (R
GS
=1MΩ)
……………………500V
V
GSS
——
Gate-Source Voltage
…………………………………
±
0V
3
I
D
——
1―G
2―D
3―S
*
Drain Current
c
=25℃）
（T
…………………………………9.0A
*
Drain current limited by maximumjunction temperature
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
t
f
Qg
Qgs
Qgd
Is
V
SD
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –
Source Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Rise Time
Turn - Off Delay Time
200
2.0
０．３４
７．０５
５５０
85
22
11
70
60
65
22
3.6
10.2
１０
V
I
D
=250μA ,V
GS
=0V
μＡ
V
DS
=200V，V
GS
=0
±100 �½�Ａ
V
GS
=±30V , V
DS
=0V
4.0
V
V
DS
= V
GS
, I
D
=250μA
０．４
７２０
110
29
30
150
130
140
29
?
S
V
GS
=10V, I
D
=4.5A
V
DS
= 40V , I
D
=4.5A *
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
V
DS
=25V, V
GS
=0,f=1ＭＨ�½�
V
DD
=100V,
I
D
=9A
R
G
= 25
Ω
*
Ｖ
ＤＳ
＝０．８Ｖ
ＤＳＳ
Ｖ
ＧＳ
＝１０Ｖ
Ｉ
Ｄ
＝９．０Ａ ＊
I
S
=9.0A , V
GS
=0
Fall Time
Total Gate Charge
Gate–
Source Charge
Gate–
Drain Charge
Continuous Source Current
Diode Forward Voltage
９．０
１．５
Ａ
Ｖ
*Pulse Test：Pulse Width≤300μs，Duty Cycle≤2%
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
