Shantou Huashan Electronic Devices Co.,Ltd.
HFP830
N-Channel Enhancement Mode Field Effect Transistor
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General Description
This Power MOSFET is produced using planar stripe, DMOS
technology. This latest technology has been especially designed to
minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for half bridge
and full bridge resonant topolgy like a electronic lamp ballast.
TO-220
1- G 2-D 3-S
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Features
•
4.5A, 500V, R
DS
(on) = 1.5Ω@V
GS
= 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF830
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Maximum Ratings
（Ta=25
℃
unless otherwise specified）
T
stg
——Storage
Temperature ------------------------------------------------------
-55~150℃
T
j
——Operating
Junction Temperature ----------------------------------------------
-55~150℃
V
DSS
——
Drain-Source Voltage ---------------------------------------------------------- 500V
V
DGR
——
Drain-Gate Voltage (R
GS
=1MΩ) ---------------------------------------------------------
V
GSS
——
Gate-Source Voltage ------------------------------------------------------------------------
I
D
——
Drain Current (Continuous) -------------------------------------------------------------------
500V
±
20V
4.5A
P
D
——
Maximum Power Dissipation -------------------------------------------------------------- 75W
I
AR
——
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 4.5 A
E
AS
——
Single Pulse Avalanche Energy
(starting Tj = 25℃, I
D
= I
AR
, V
DD
= 50 V) --------------------------------------------------270 mJ
E
AR
——
Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------
7.3mJ
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Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.71
Max 62.5
Typ
0.5
Unit
℃/W
℃/W
℃/W
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
