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HM28S 参数 Datasheet PDF下载

HM28S图片预览
型号: HM28S
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 243 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
General Purpose And Switching Applications.
HM28S
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissip ation…………………………………850mW
V
CBO
——Collector-Base
Voltage………………………………40V
V
CEO
——Collector-Emitter
Voltage……………………………20V
V
E B O
——Emitter
-Base Voltage………………………………6V
I
C
——Collector
Current………………………………………1.25A
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol 
Characteristics 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min 
Typ 
Max 
Unit 
Test Conditions 
BV
CBO
BV
CEO
BV
EBO
H
FE(1)
 
H
FE(2)
 
H
FE(3)
 
H
FE(4)
 
V
CE(sat)
 
V
BE(sat)
I
CBO
I
EBO
I
CES
40 
20 
6 
300 
300 
310 
303��
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
1000 
 
 
0.55 
1.2 
100 
100 
100 
V 
V 
V 
 
 
 
 
V 
V 
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0 
I
E
=100μA,I
C
=0
V
CE
=1V, I
C
=1mA 
V
CE
=1V, I
C
=100mA 
V
CE
=1V, I
C
=300mA 
V
CE
=1V, I
C
=500mA 
I
C
=600mA, I
B
=20mA
 
I
C
=600mA, I
B
=20mA
DC Current Gain 
DC Current Gain 
DC Current Gain 
DC Current Gain 
Collector- Emitter Saturation Voltage 
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter
Cut-off Current
Collector Cut-off Current
�½�A 
V
CB
=35V, I
E
=0
�½�A 
V
EB
=6V, I
C
=0
�½�A 
V
CE
=20V, V
EB
=0
h
FE
Classification
B
 
 
    
300—600    
 
C
     500—800      
 
D
700—1000