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HP107 参数 Datasheet PDF下载

HP107图片预览
型号: HP107
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 147 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HP107的Datasheet PDF文件第2页  
Shantou Huashan Electronic Devices Co.,Ltd.
PNP DARLINGTON TRANSISTOR
HP107
APPLICATIONS
High Voltage switching.Motor driving.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
—��Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 80W
P
C
——Collector
Dissipation(Ta=25℃)………………………2W
V
CBO
——Collector-Base
Voltage………………………… -100V
V
CEO
——Collector-Emitter
Voltage……………………… -100V
V
EBO
——Emitter-Base
Voltage……………………………… -5V
I
C
——Collector
Current(DC)……………………………… -8A
I
C
——Collector
Current(Pulse)……………………………-15A
(DC)
………………………………………-1A
I
B
——Base
Current
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO(SUS)
I
CEO
I
CBO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat1)
V
CE(sat2)
V
BE(on)
Cob
-100
-50
-50
-2
1000
200
20000
-2
-2.5
-2.8
300
V
μA
μA
mA
I
C
=-30mA, I
B
=0
V
CE
=-50V, I
B
=0
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-4V, I
C
=-3A
V
CE
=-4V, I
C
=-8A
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter On Voltage
Output Capacitance
V
V
V
pF
I
C
=-3A, I
B
=-6mA
I
C
=-8A, I
B
=-80mA
V
CE
=-4V,I
C
=-8A,
V
CB
=-10V, I
E
=0,
f=0.1MHz