NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
NPN Epitaxial Darlington Transistor. High DC Current Gain.
Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
HP122U
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature……���…………………………150℃
P
C
——Collector
Dissipation Tc=25℃）
（
……………………………20W
V
CBO
——Collector-Base
Voltage………………………………100V
V
CEO
——Collector-Emitter
Voltage……………………………100V
V
E B O
——
Emitter - Base Voltage………………………………5 V
I
C
——Collector
Current（DC）………………………………………5A
I
CP
——Collector
Current Pulse）……………………………………8A
（
Ib——Base Current………………………………………………120mA
TO-251
1―Base，B
2―Collector，
C
3―Emitter，E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
BV
CBO
BV
CEO
H
FE（2）
V
CE(sat1)
Collector- Emitter Saturation Voltage
V
CE(sat2)
Collector- Emitter Saturation Voltage
V
BE(ON)
I
CEO
I
CBO
I
EBO
Cob
Base-Emitter On Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Output Capacitance
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Min Typ Max Unit
１００
１００
１０００
１０００
２．０
４．０
２．５
０．５
０．２
２．０
２００
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
Test Conditions
I
C
=1mA,
I
C
=5mA,
I =0
E
I =0
B
H
FE（1）
DC Current Gain
V
CE
=3V, I
C
=0.5A
V
CE
=3V, I
C
=3A
I
C
=3A, I
B
=12mA
I
C
=3A, I
B
=20mA
V
CE
=3V, I
C
=3A
�½�Ａ
V
CB
=50V, I
B
=0
�½�Ａ
V
CB
=100V, I
E
=0
�½�Ａ
V
EB
=5V, I
C
=0
�½�Ｆ
V
CB
=10V, I
E
=0，f=0.1ＭＨ�½�
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
