欢迎访问ic37.com |
会员登录 免费注册
发布采购

HP142TSW 参数 Datasheet PDF下载

HP142TSW图片预览
型号: HP142TSW
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 79 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HP142TSW的Datasheet PDF文件第2页浏览型号HP142TSW的Datasheet PDF文件第3页  
Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TSW
█ APPLICATIONS 
High DC Current Gain
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃ 
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 70W
V
CBO
——Collector-Base
Voltage…………………………… 100V
V
CEO
——Collector-Emitter
Voltage………………………… 100V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current(DC)……………………………… 8A
I
B
——Base
Current……………………………………………0.5A
TO-263
1―
Base,B
2―Collector,C
3―Emitter, E
 
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
 
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CEO(SUS)
I
CEO
I
CBO
I
EBO
 
H
FE(1)
 
H
FE(2)
V
CE(sat1)
 
V
CE(sat2)
V
BE(
sat
)
 
V
BE(on)
t
D
t
R
t
S
t
F
100 
 
 
 
1000 
1000 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
0.15 
0.55 
2.5 
2.5 
 
2 
1 
2 
 
 
2 
3 
3.5 
3 
 
 
 
 
V 
�½�A 
�½�A 
�½�A 
 
 
V 
V 
V 
V 
�½�S 
�½�S 
�½�S 
�½�S 
I
C
=30mA, I
B
=0 
V
CE
=50V, I
B
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0 
V
CE
=4V, I
C
=0.5A 
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=10mA 
I
C
=10A, I
B
=40mA
I
C
=10A, I
B
=40mA 
V
CE
=4V,I
C
=10A, 
Vcc=30V,Ic=5A
I
B1=
20mA
I
B2
=-20mA
DC Current Gain 
Collector- Emitter Saturation Voltage 
Base- Emitter Saturation Voltage 
Base- Emitter On Voltage
Deiay time
Rise Time
Storage Time
Fall Time